Tunnel switch diode based on AlSb/GaSb heterojunctions
نویسندگان
چکیده
منابع مشابه
Tunnel switch diode based on AlSbÕGaSb heterojunctions
We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic ‘‘S’’ shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barr...
متن کاملOn-chip optical diode based on silicon photonic crystal heterojunctions.
Optical isolation is a long pursued object with fundamental difficulty in integrated photonics. As a step towards this goal, we demonstrate the design, fabrication, and characterization of on-chip wavelength-scale optical diodes that are made from the heterojunction between two different silicon two-dimensional square-lattice photonic crystal slabs with directional bandgap mismatch and differen...
متن کاملSpin diode based on Fe/MgO double tunnel junction.
We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The ob...
متن کاملDesign and Implementation of a New Switch-Diode based Single Source Multilevel Inverter Topology
Multilevel inverters are a new generation of DC-AC converters at medium and high voltage and power levels. These converters have made great strides in the use of industrial applications compared to conventional two-level inverters due to lower harmonic distortion, filter size, EMI and dv/dt. Besides these merits, some disadvantages can be mentioned such as more power electronics devices and com...
متن کاملTunnel-Diode Low-Level Detection
An analysis of tnmel-diode low-level detection is presented for the purpose of explaining some of the unusual detection characteristics that occur under certain hias conditions. For example, in the vicinity of its inflection hias point, a tmmel diode exhibits a discriminator-like rectification behavior with two sensitivity peaks. When biased at one of these peaks, the diode is capable of unusua...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2000
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1317236